Just recently, Toshiba Electronics Europe rolled out an all-new TPD7104AF high-side N-channel Power MOSFET gate driver that can be controlled by 3.3-logic input. One of the premier features of this device is that it can prevent the reverse current flow to itself in case of reverse battery situation.
The TPD7104AF is exclusively designed for automotive applications, such as junction boxes in 12V battery system, semiconductor relays in ECUs, and power connect/disconnect switches in start/stop systems.
The combination of a TPD7104AF gate driver and an N-channel power MOSFET helps create a semiconductor relay, thanks to its built-in charge pump. Adding a shunt resistor also enables the short-circuit protection and diagnosis functions to be used. Included in the other features of the new driver chip are short-circuit protection and diagnosis functions. Moreover, the TPD7104AF features an extremely low output leak current for reverse battery condition with IREV=-1uA (min) (@ Tj=25°C).
The TPD7104AF gate driver chip measures 2.8mm x 2.9mm and is housed in a highly compact PS-8 package.
