Toshiba’s Gate Driver Chip Prevents Incoming Reverse Current

Posted By: Hamid Moarefon: Tuesday, July 5, 2016In: Parts

Just recently, Toshiba Electronics Europe rolled out an all-new TPD7104AF high-side N-channel Power MOSFET gate driver that can be controlled by 3.3-logic input. One of the premier features of this device is that it can prevent the reverse current flow to itself in case of reverse battery situation.

The TPD7104AF is exclusively designed for automotive applications, such as junction boxes in 12V battery system, semiconductor relays in ECUs, and power connect/disconnect switches in start/stop systems.

The combination of a TPD7104AF gate driver and an N-channel power MOSFET helps create a semiconductor relay, thanks to its built-in charge pump. Adding a shunt resistor also enables the short-circuit protection and diagnosis functions to be used. Included in the other features of the new driver chip are short-circuit protection and diagnosis functions. Moreover, the TPD7104AF features an extremely low output leak current for reverse battery condition with IREV=-1uA (min) (@ Tj=25°C).

The TPD7104AF gate driver chip measures 2.8mm x 2.9mm and is housed in a highly compact PS-8 package.

Hamid Moaref

Hamid Moaref has always been fascinated by cars and the automotive industry. His family has a longstanding association with the industry and has been in the tire business for the past 35 years. Raised in Dubai, Hamid attended Capilano University in Vancouver where he graduated with a BBA in marketing before attending an intensive course in magazine publishing in 2005. He has been the publisher and chief editor of Tires & Parts magazine for the past ten years.